Don’t be worried about memory storage, IIT Roorkee develops MERAM Chip
Roorkee- A Team of Researchers IIT Roorkee has developed new technology in Chip designing which made a major breakthrough in memory devices Technology. Researchers innovate high-density, energy-efficient, and four-logic state memory device called the Magnetoelectric Random Access Memory (MeRAM).
According to team, this device has a potential to provide the massive boost in computing process and memory based task like video and multimedia signal processing, pattern recognition, virtual reality, artificial intelligence and machine learning.
Dr.Davinder Kaur Walia , Department of Physics and Centre for Nanotechnology professor said, “MeRAM has immense potential to be used in future memory chips for almost all electronic applications, including smartphones, tablets, computers, microprocessors, and for large data storage”
She said, “The world is rapidly moving towards faster, smaller and quantum technologies which has created an ever-increasing demand for small and more efficient devices and technology. Our focus was to achieve a four-logic state as we knew that then we will be able to create a device which could probably usher in a new technological revolution.”
To achieve this, we used a new material called Ferromagnetic Shape Memory Alloys (FSMA) and the concept of composite barrier were chosen which helps us in achieving the goal of distinguishable memory logic states. The current ultimate memory cell has shown a tremendous improvement of nearly 140 per cent in the memory functions,” she added.